发明名称 PRESSURE SENSOR WITH SILICON FRIT BONDED CAP
摘要 A pressure sensor apparatus and method that incorporates a silicon frit bonded cap. The pressure sensor includes a silicon sensor wafer with diaphragms at a bottom surface thereof, a silicon cap wafer mounted on the topside of each sensor wafer, a plurality of silicon sensor die formed on the sensor wafer, a silicon cap wafer etched to create a plurality of reference cavities on the topside of the diaphragm, a thin glass frit to form a wafer-to-wafer bond between the sensor wafer and cap wafer. Sensing devices such as semiconductor die/sensor, peizoresistors, can be used to sense the pressure. The wafer-to-wafer frit bonding improves the output signal drift and the thermal performance of the pressure sensor minimizes the thermal mismatch created by anodic bonded glass wafers.
申请公布号 KR101355838(B1) 申请公布日期 2014.01.27
申请号 KR20087019238 申请日期 2007.01.04
申请人 发明人
分类号 G01L9/00 主分类号 G01L9/00
代理机构 代理人
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