| 摘要 |
The present invention relates to a vertical type resistance change memory device and a manufacturing method thereof capable of minimizing a touched size between a resistance change material layer and an electrode by forming a thin film layer with an atomic layer deposition (ALD) method between the resistance change material layer and a horizontal electrode and touching the resistance change material layer and the horizontal electrode through a hole formed on the thin film layer in a vertical type resistance change memory. The vertical type resistance change memory forms the resistance change material layer in a crossing point in which a plurality of horizontal electrodes, which is laminated between insulating layers, and a plurality of vertical electrodes cross. |
