发明名称 SUPPRESSION OF PARASITIC GROWTH IN SUBSTRATE PROCESSING SYSTEM BY SUPPRESSING PRECURSOR FLOW AND PLASMA IN OUTSIDE OF SUBSTRATE AREA
摘要 PROBLEM TO BE SOLVED: To provide a system and a method for removing excessive precursor from a processing chamber and preventing a precursor from flowing into a specific area (cavity etc.) behind a shower head.SOLUTION: A substrate processing system 50 comprises a shower head 70, and the shower head includes a base section and a stem section 72, to supply precursor gas to a chamber. A collar 80 combines the shower head 70 with a top surface of the chamber. The collar 80 includes plural slots 86 and is arranged around the stem section 72 of the shower head 70. Purge gas is given a direction to go into the area between the base section of the shower head 70 and the top surface of the chamber through the plural slots 86.
申请公布号 JP2014012891(A) 申请公布日期 2014.01.23
申请号 JP20130131699 申请日期 2013.06.24
申请人 NOVELLUS SYSTEMS INCORPORATED 发明人
分类号 C23C16/455;H01L21/205 主分类号 C23C16/455
代理机构 代理人
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