发明名称 POWER SEMICONDUCTOR DEVICE
摘要 A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level.
申请公布号 US2014022001(A1) 申请公布日期 2014.01.23
申请号 US201214009380 申请日期 2012.03.28
申请人 NAKAHARA AKIHIRO;NAKAJIMA SAKAE;RENESAS ELECTRONICS CORPORATION 发明人 NAKAHARA AKIHIRO;NAKAJIMA SAKAE
分类号 H03K17/081 主分类号 H03K17/081
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