| 摘要 |
<p>The invention concerns a device (10) comprising a plurality of thin layers (12, 14, 18) comprising a layer (14) formed of a ferroelectric material which can be polarised along a plurality of polarisation directions according to an electrical voltage applied to said layer of ferroelectric material, surrounded by a pair of conductive layers (12, 18) forming electrodes. The device according to the invention comprises an intermediate layer (16) between said layer (14) of ferroelectric material and one of the conductive layers (12, 18), said intermediate layer (16) being made up of a material of which the electronic properties are modified according to the polarisation direction in said adjacent layer (14) of ferroelectric material. The device according to the invention has particularly advantageous applications as a memory element in a non-volatile memory, as an element in a programmable logic circuit and as a micro-switch.</p> |
