| 摘要 |
<p>Provided is a manufacturing method for an array substrate with an embedded photovoltaic cell, which comprises the steps of: step 1, providing a substrate (20); step 2, forming a buffer layer (30) on the substrate (20); step 3, forming an amorphous silicon layer (40) on the buffer layer (30); step 4, laser annealing, and converting the amorphous silicon layer (40) into a polycrystalline silicon layer (40'); step 5, forming a preset pattern on the polycrystalline silicon layer (40') through a mask process; step 6, forming a first photoresist pattern on the polycrystalline silicon layer (40') and injecting N+ ions into the first photoresist pattern; step 7, forming a gate insulation layer (60) on the polycrystalline silicon layer (40'); step 8, forming a second photoresist pattern on the gate insulation layer (60) and injecting N- ions into the second photoresist pattern; step 9, forming a third photoresist pattern on the gate insulation layer (60), injecting P+ ions into the third photoresist pattern and activating same; step 10, forming a first metal layer (70) on the gate insulation layer (60) and forming a gate electrode (72) through the mask process; step 11, forming a first insulation layer (80) on the first metal layer (70) and hydrogenating the first insulation layer (80), so as to form a hydrogenated insulation layer (80'); step 12, forming a first channel (82) on the first insulation layer (80) through a mask process; and step 13, forming a second metal layer (90) on the first insulation layer (80), forming a metal electrode (92) through a mask process, and then forming a thin-film transistor and a photovoltaic cell.</p> |
