| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of decreasing contact resistance at contact parts of source and drain electrodes and an active layer, and further to provide a method for manufacturing the same.SOLUTION: A thin film transistor comprises: a gate electrode; an active layer; and source and drain electrodes. In the active layer, one region is in contact with the source and drain electrodes, and thickness of the one region in contacting with the source and drain electrodes is formed thinner than that of a remaining region. |
