| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide single crystal manufacturing apparatus manufacturing single crystal of good quality without forming a concave surface at an end part in a radial direction of grown single crystal.SOLUTION: A single crystal manufacturing apparatus 1 comprises a crucible main body 5 housing material for sublimation 3, a lid 9 equipped with a seed crystal support section 7 at the position facing the material for sublimation 3, a guide member 11 extending from the vicinity of the outer periphery of the seed crystal support section 7 to the material for sublimation 3 like a cylinder with increasing diameter as a circular truncated cone, and a thermal insulation 21 which is placed at the outer peripheral side of the guide member 11 and has a disc-like shape and the thermal conductivity of which is set lower than that of single crystal 27. The thermal insulation 21 is arranged to extend from an outer peripheral surface of the guide member 11 to an inner wall surface of the crucible main body 5 at the height of the vertically middle part of the guide member 11. When growing the single crystal 27 by heating the material for sublimation 3 and seed crystal, the flow of heat H going from the material for sublimation 3 to the seed crystal is concentrated to the seed crystal by the thermal insulation 21. |
