| 摘要 |
A semiconductor die, which includes a first semiconductor device, a first passivation layer, and a first interconnect bump, is disclosed. The first passivation layer is over the first semiconductor device, which includes a first group of device fingers. The first interconnect bump is thermally and electrically connected to each of the first group of device fingers. Additionally, the first interconnect bump protrudes through a first opening in the first passivation layer. |
