| 摘要 |
A semiconductor device including a sense amplifier that includes a first transistor and a second transistor. The first transistor includes a first gate electrode formed over a first channel region and connected to a first bit line, a first diffusion region connected to a second bit line with a first side edge defining the first channel region, and a second diffusion region connected to a power line and includes a second side edge defining the first channel region. The second transistor includes a second gate electrode formed over a second channel region and connected to the second bit line, a third diffusion region connected to the first bit line and includes a third side edge defining the second channel region, and a fourth diffusion region connected to the power line with a fourth side edge defining the second channel region. Directions of the bit lines and diffusion side edges are prescribed. |
