THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE

摘要

The present invention relates to the technical field of displaying. Provided are a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which do not cause damages to an active layer (12) when a through-hole (16) is respectively formed above a source area (120) and a drain area (121) by using a through-hole etching process. The thin film transistor (1) comprises a substrate (10), the active layer (12) provided on the substrate (10), a gate insulating layer (13), a gate (14) and an interlayer insulating layer (17), and further comprises a conductive etching stop layer (15) provided on the active layer (12). The position of the conductive etching stop layer (15) corresponds to the source area (120) and the drain area (121) of the active layer (12), the through-hole (16) is respectively formed above the source area (120) and the drain area (121) of the active layer (12), and the through-hole (16) does not extend out of the edge of the conductive etching stop layer (15).