发明名称 |
INTEGRATED CIRCUIT DEVICE INCLUDING LOW RESISTIVITY TUNGSTEN AND METHODS OF FABRICATION |
摘要 |
An integrated circuit device includes a semiconductor substrate and a gate electrode on the semiconductor substrate. The gate electrode structure includes an insulating layer of a dielectric material on the semiconductor substrate, an oxygen barrier layer on the insulating layer, and a tungsten (W) metal layer on the oxygen barrier layer. |
申请公布号 |
US2014021470(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201213551066 |
申请日期 |
2012.07.17 |
申请人 |
FRANK MARTIN M.;NARAYANAN VIJAY;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRANK MARTIN M.;NARAYANAN VIJAY |
分类号 |
H01L29/16 |
主分类号 |
H01L29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|