发明名称 ETCHING METHOD, AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE PRODUCT AND SEMICONDUCTOR DEVICE USING THE SAME, AS WELL AS KIT FOR PREPARATION OF ETCHING LIQUID
摘要 <p>A method of etching a semiconductor substrate, having the steps of: preparing an etching liquid by mixing a first liquid with a second liquid to be in the range of pH from 8.5 to 14, the first liquid containing a basic compound, the second liquid containing an oxidizing agent; and then applying the etching liquid to a semiconductor substrate on a timely basis for etching a Ti-containing layer in or on the semiconductor substrate.</p>
申请公布号 WO2014014124(A1) 申请公布日期 2014.01.23
申请号 WO2013JP69960 申请日期 2013.07.17
申请人 FUJIFILM CORPORATION 发明人 KAMIMURA, TETSUYA;INABA, TADASHI;MURO, NAOTSUGU;NISHIWAKI, YOSHINORI
分类号 H01L21/306;H01L21/308 主分类号 H01L21/306
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