SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed are a semiconductor device and a method for manufacturing same. The method comprises: forming on a substrate (100) a sacrificial layer (102) and a semiconductor layer (104) in sequence; forming a first masking layer (108) on the semiconductor layer (104); taking the first masking layer (108) as a mask and forming an opening (110) to the substrate (100); selectively removing at least part of the sacrificial layer (102) via the opening (110) and filling an insulator material (112) therein; forming one (114) of a source region and a drain region in the opening (110); forming a second masking layer (116, 120) on the substrate (100); taking the second masking layer (116, 120) as a mask and forming the other (124) of the source region and the drain region; removing at least part of the second masking layer (116, 120); and forming a gate medium layer (126), and forming a gate conductor (130) in the form of a sidewall into a sidewall of the remaining part of the second masking layer (116, 120).