发明名称 NONVOLATILE MEMORY, READING METHOD OF NONVOLATILE MEMORY, AND MEMORY SYSTEM INCLUDING NONVOLATILE MEMORY
摘要 A nonvolatile memory device includes a memory cell array and a read/write circuit connected to the memory cell array through bit lines. The read method of the nonvolatile memory device includes receiving a security read request, receiving security information, and executing a security read operation in response to the security read request. The security read operation includes reading of security data from the memory cell array using the read/write circuit, storing of the read security data in a register, performing security decoding on the read security data stored in the register using the received security information, resetting the read/write circuit, and outputting a result of the security decoding.
申请公布号 US2014026232(A1) 申请公布日期 2014.01.23
申请号 US201313941568 申请日期 2013.07.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEUNGJAE;LEE JINYUB
分类号 G06F12/14 主分类号 G06F12/14
代理机构 代理人
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