发明名称 |
Non-Uniform Channel Junction-Less Transistor |
摘要 |
The present disclosure discloses a method of forming a semiconductor layer on a substrate. The method includes patterning the semiconductor layer into a fin structure. The method includes forming a gate dielectric layer and a gate electrode layer over the fin structure. The method includes patterning the gate dielectric layer and the gate electrode layer to form a gate structure in a manner so that the gate structure wraps around a portion of the fin structure. The method includes performing a plurality of implantation processes to form source/drain regions in the fin structure. The plurality of implantation processes are carried out in a manner so that a doping profile across the fin structure is non-uniform, and a first region of the portion of the fin structure that is wrapped around by the gate structure has a lower doping concentration level than other regions of the fin structure. |
申请公布号 |
US2014024182(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201313941199 |
申请日期 |
2013.07.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
GOTO KEN-ICHI;WU ZHIQIANG |
分类号 |
H01L29/66 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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