Contact structure of semiconductor device e.g. MOSFET mounted in e.g. integrated circuit (IC), has metal layers that are formed above dielectric layer, to cover opening of dielectric layer

摘要

The structure has a substrate that is comprised of a major surface with a trench filled (104) with a strained material, such that a lattice constant of the strained material differs from the substrate. An interlayer dielectric (ILD) layer having an opening is formed (106) above the strained material. A dielectric layer having a thickness between 1 nm and 10 nm, is formed to cover the dielectric sidewalls and the bottom of the opening. A pair of metal layer is formed (112,114) above dielectric layer, to cover the opening of the dielectric layer. Independent claims are included for the following: (1) a MOSFET; and (2) a method for manufacturing a semiconductor device.