发明名称 COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, SOLAR CELL ELEMENT, METHOD FOR MANUFACTURING SOLAR CELL ELEMENT, AND SOLAR CELL
摘要 <p>A composition for forming a passivation layer containing a compound expressed by general formula (I): M(OR1) m , and one material selected from the group consisting of a fatty acid amide, a polyalkylene glycol compound, and an organic filler. M includes at least one metallic element selected from the group consisting of Nb, Ta, V, Y and Hf; each R1 individually represents a C1-8 alkyl group or a C6-14 aryl group; and m represents an integer of 1 to 5.</p>
申请公布号 WO2014014114(A1) 申请公布日期 2014.01.23
申请号 WO2013JP69704 申请日期 2013.07.19
申请人 HITACHI CHEMICAL COMPANY, LTD. 发明人 HAYASAKA, TSUYOSHI;YOSHIDA, MASATO;NOJIRI, TAKESHI;KURATA, YASUSHI;TANAKA, TOORU;ORITA, AKIHIRO;ADACHI, SHUICHIRO;HATTORI, TAKASHI;MATSUMURA, MIEKO;WATANABE, KEIJI;MORISHITA, MASATOSHI;HAMAMURA, HIROTAKA
分类号 H01L21/316;C09K3/00;H01L21/312;H01L31/04 主分类号 H01L21/316
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