| 摘要 |
PURPOSE: A method for manufacturing a high efficiency light emitting diode is provided to minimize crystal defects by using a semiconductor space structure and a semiconductor layer grown on a lateral surface. CONSTITUTION: An n-GaN based sacrificial layer (20) is formed on a substrate. The n-GaN based sacrificial layer is etched. A space structure (30) is formed on the substrate. A first semiconductor layer is grown by using the space structure as a seed. An n-GaN based space structure is removed by electrochemical etching. |
