| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure that allows retaining memory contents even in a situation in which power is not supplied and has no restriction of the number of writings.SOLUTION: A semiconductor device includes: a first transistor 160 having a channel formation region, a first gate insulating layer, a first gate electrode 110, a first source electrode, and a first drain electrode; an oxide semiconductor layer; a second transistor 162 having a second source electrode, a second drain electrode, a second gate insulating layer, and a second gate electrode; and a capacitive element 164 having one of the second source electrode and the second drain electrode, the second gate insulating film, and an electrode provided on the second gate insulating layer so as to be overlapped with one of the second source electrode and the second drain electrode. The first gate electrode and one of the second source electrode and the second drain electrode are electrically connected. |
