TUNNEL FIELD EFFECT TRANSISTOR DEVICE AND METHOD FOR MAKING SAID DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a tunnel field effect transistor device (TFET) and a method for making said device.SOLUTION: The tunnel field effect transistor device comprises at least following layers: a highly doped drain layer 6; a highly doped source layer 2; a channel layer 5; a gate dielectric layer 8 and a gate electrode layer 9 which extend along the source layer 2; and a highly doped pocket layer 3 extending between and along the gate dielectric layer 8 and the source layer 2. The pocket layer 3 extends to between and along the source layer 2 and the channel layer 5.