| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon substrate having an uneven structure at a high aspect ratio, that can attain flatness in an inner wall, etc. of a vertical hole structure, etc. when forming the hole structure by performing etching at a higher aspect ratio in a silicon substrate by using a Bosch process.SOLUTION: A method for manufacturing a silicon substrate having an uneven structure at a high aspect ratio with the use of a plasma etching device includes: a first process (Bosch process) for forming a vertical wall in the silicon substrate by a Bosch process; and a second process for etching the vertical wall by a reactive ion etching process while applying a negative bias voltage to the silicon substrate with the use of processed gas containing at least one kind of gas among oxygen gas, dinitrogen monoxide gas, nitrogen monoxide gas, carbon monoxide gas, and hydrogen gas. It is preferable that SFgas is mixed with etching gas to be used in the second process. |
