发明名称 |
COMPOSITION FOR FORMING PASSIVATION LAYER, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION LAYER, METHOD FOR PRODUCING SAID SEMICONDUCTOR SUBSTRATE, SOLAR CELL ELEMENT, AND METHOD FOR PRODUCING SAME |
摘要 |
A composition for forming a passivation layer, the composition containing: at least one type of alkoxide represented by general formula (I); at least one compound selected from among a titanium compound, a zirconium compound, and a silicon alkoxide; a solvent; and a resin. General formula (I) is M(OR1)m (wherein, M represents at least one metal element selected from among Nb, Ta, V, Y and Hf; R1 represents a C1-8 alkyl group or a C6-14 aryl group; and m represents an integer between 1 and 5). |
申请公布号 |
WO2014014107(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
WO2013JP69697 |
申请日期 |
2013.07.19 |
申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
ADACHI, SHUICHIRO;YOSHIDA, MASATO;NOJIRI, TAKESHI;KURATA, YASUSHI;TANAKA, TOORU;ORITA, AKIHIRO;HAYASAKA, TSUYOSHI;HATTORI, TAKASHI;MATSUMURA, MIEKO;WATANABE, KEIJI;MORISHITA, MASATOSHI;HAMAMURA, HIROTAKA |
分类号 |
H01L21/316;C09K3/00;H01L21/312;H01L31/04 |
主分类号 |
H01L21/316 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|