| 摘要 |
A method of fabricating an acoustic wave device includes: bonding a support substrate to a piezoelectric substrate on which an IDT is to be formed; forming a modified region in the support substrate by irradiation of a laser beam; and cutting the support substrate and the piezoelectric substrate in the modified region, wherein a distance from a boundary face between the support substrate and the piezoelectric substrate to an edge portion of the modified region at the boundary face side is greater than or equal to 20 mum and less than 69 mum. |
