SEMICONDUCTOR DEVICE

摘要

In order to achieve improved reliability and improved usability in a semiconductor device provided with nonvolatile memory cells, the semiconductor device is provided with a nonvolatile memory unit including a plurality of overwritable memory cells (CL), and a control circuit for controlling access to the nonvolatile memory unit. The control circuit assigns one physical address, for example, to a chain memory array (CY) in the nonvolatile memory unit. The control circuit writes to some memory cells (for example, CL0) in the chain memory array (CY) in response to a first write instruction to the physical address, and writes to some other memory cells (for example, CL1) in response to a second write instruction to the physical address.