发明名称 |
INTEGRATED CIRCUIT DEVICE INCLUDING LOW RESISTIVITY TUNGSTEN AND METHODS OF FABRICATION |
摘要 |
An integrated circuit device includes a semiconductor substrate and a gate electrode on the semiconductor substrate. The gate electrode structure includes an insulating layer of a dielectric material on the semiconductor substrate, an oxygen barrier layer on the insulating layer, and a tungsten (W) metal layer on the oxygen barrier layer. Also disclosed are methods for fabricating the device. |
申请公布号 |
US2014024208(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201213558805 |
申请日期 |
2012.07.26 |
申请人 |
FRANK MARTIN M.;NARAYANAN VIJAY;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FRANK MARTIN M.;NARAYANAN VIJAY |
分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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