METHOD FOR GROWING SILICON SINGLE CRYSTAL

摘要

The present invention is a method for growing a silicon single crystal, comprising introducing a polycrystalline silicon raw material and a dope raw material into a quartz crucible and growing a silicon single crystal having a resistivity of 500 Omegacm or more and desired electrical conductivity type from a melt by a CZ method, wherein the dope raw material is produced by cutting from a silicon single crystal containing a dopant element and is introduced in an amount of 1 g or more and less than 10% relative to the total weight of the raw materials to be introduced into the quartz crucible. This method enables the provision of a method for controlling a resistivity, whereby it becomes possible to secure a resistivity of 500 Omegacm or more and a desired electric conductivity type.