| 摘要 |
The present invention relates to a reactive metal source supply apparatus of a vertical hydride vapor phase epitaxy reactor (HVPE - reactor), in which a container (2) of a metal source for growth is equipped in a reactor (1), and a metal source supply unit (3) is provided outside or inside the reactor separately from the container (2) of a metal source for growth. A metal source (4) is consumed as hydro chloride (HCl) supplied through a hydro chloride (HCl) supply pipe positioned within the container (2) of a metal source for growth, and the metal source (4) are reacted to form GaCl, and, therefore, the same condition is not maintained. As such, the consumed amount of the metal source (4) is supplemented from the separate metal source supply unit (3) by using nitrogen pressure. The amount of the metal source (4) in the container (2) of a metal source for growth is able to be maintained constantly through a metal source supply apparatus so that the reaction efficiency of hydro chloride (HCl) and the metal source (4) is the same, which enables the same process condition to be maintained for a long term, and the same growth rate and the process reproducibility to be secured. |
