发明名称 |
Novel Copper Etch Scheme for Copper Interconnect Structure |
摘要 |
The present disclosure is directed to a method of manufacturing an interconnect structure in which a low-k dielectric layer is formed over a semiconductor substrate followed by formation of a copper or copper alloy layer over the low-k dielectric layer. The copper or copper alloy layer is patterned and etched to form a copper body having recesses, which are then filled with a low-k dielectric material. The method allows for formation of a damascene structures without encountering the various problems presented by non-planar features and by porus low-K dielectric damage. |
申请公布号 |
US2014021611(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201213550951 |
申请日期 |
2012.07.17 |
申请人 |
LEE MING HAN;CHEN HAI-CHING;LEE HSIANG-HUAN;BAO TIEN-I;TENG CHI-LIN;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LEE MING HAN;CHEN HAI-CHING;LEE HSIANG-HUAN;BAO TIEN-I;TENG CHI-LIN |
分类号 |
H01L21/768;H01L23/538 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|