发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 A semiconductor device includes a supporting substrate; a semiconductor substrate that includes a first surface in which at least one layer is formed and a second surface that is positioned on an opposite side to the first surface, and is pasted to a surface of the supporting substrate with adhesive such that the first surface faces the supporting substrate side; a protective film that is formed on the second surface of the semiconductor substrate and on a surface of the adhesive extending outwardly from a region between the supporting substrate and the semiconductor substrate, and including a perimeter part that is positioned outside a perimeter part of the adhesive, and positioned inside a perimeter part of the supporting substrate; and an electrode material that is formed so as to be embedded in a penetration hole that penetrates the protective film and the semiconductor substrate.
申请公布号 US2014021631(A1) 申请公布日期 2014.01.23
申请号 US201313776396 申请日期 2013.02.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TSUMURA KAZUMICHI;HIGASHI KAZUYUKI
分类号 H01L23/498;H01L21/768 主分类号 H01L23/498
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