SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To reduce an element area and reduce contact resistance in a semiconductor device having a configuration for short circuiting a gate electrode and an active region.SOLUTION: A semiconductor device comprises: a semiconductor substrate having a first region; a gate electrode formed on the semiconductor substrate in the first region; a first active region formed on the semiconductor substrate in the first region; a first silicide layer formed on a top face and a lateral face of the gate electrode in the first region; and a contact via plug which touches the silicide layer at least on the lateral face of the gate electrode and the first active region.