| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer manufacturing method capable of adjusting a resistivity distribution of an epitaxial film while improving the generation of a slip by achieving the optimization of temperature in a wafer surface during epitaxial growth.SOLUTION: A silicon epitaxial wafer manufacturing method includes at least a temperature rising process, a pre-baking process, and an epitaxial film formation process. Concerning a wafer in-surface temperature distribution to be indicated by a temperature difference between the center part and outer peripheral part of a wafer, the temperature rising process and the pre-baking process are performed in a first wafer in-surface temperature distribution, and the epitaxial film formation process is performed in a second wafer in-surface temperature distribution. The second wafer in-surface temperature distribution is allowed to be a temperature distribution where the temperature of a wafer outer peripheral part is lower than that of the first wafer in-surface temperature distribution. |
