| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that allows integrating a flash memory cell and a low-voltage operation transistor and a high-voltage operation transistor and preventing defects from occurring due to a mixed mounting of different types of transistors.SOLUTION: A semiconductor device includes: a nonvolatile memory element having a first gate insulating film 25 formed on a memory region, a floating gate electrode formed on the first gate insulating film, an inter-electrode insulating film formed on the floating gate electrode, a first gate electrode 28c formed on the inter-electrode insulating film, a first silicon oxide film 36 formed on side walls of the floating gate electrode and the first gate electrode, a silicon nitride film 37, and a second silicon oxide film 44c; and a transistor having a second gate insulating film 13b formed on a logic region, a second gate electrode 28b formed on the second gate insulating film, and a third silicon oxide film 44b formed on side walls of the second gate electrode. |
