| 摘要 |
A surface-emitting semiconductor laser includes a substrate, a first n-type semiconductor multi-layer reflecting mirror that is formed on the substrate and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, an n-type semiconductor layer that is formed on the first semiconductor multi-layer reflecting mirror, has an optical film thickness greater than an oscillation wavelength, and includes Al and Ga, an active region formed on the semiconductor layer, and a second p-type semiconductor multi-layer reflecting mirror that is formed on the active region and includes a pair of a high refractive index layer with a relatively high refractive index and a low refractive index layer with a low refractive index which are laminated, wherein an n-type impurity dopant injected into the semiconductor layer is a group VI material or Sn. |
