发明名称 THIN FILM TRANSISTOR DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 A thin film transistor display panel includes a substrate, a gate wire on the substrate and including a gate line and a gate electrode; a gate insulating layer on the gate wire; a semiconductor layer on the gate insulating layer; a data wire including a source electrode on the semiconductor layer, a drain electrode opposing the source electrode with respect to the gate electrode, and a data line; a passivation layer on the data wire having a contact hole exposing the drain electrode; and a pixel electrode on the passivation layer and connected to the drain electrode through the contact hole. The gate wire has a first region and second region where the gate line and the gate electrode are positioned, respectively. The thickness of the gate wire in the first region is greater than the thickness of the gate wire in the second region.
申请公布号 US2014024157(A1) 申请公布日期 2014.01.23
申请号 US201314036668 申请日期 2013.09.25
申请人 SAMSUNG DISPLAY CO., LTD. 发明人 KIM HYUNG-JUN;JEONG CHANG-OH;KIM JAE-HONG
分类号 H01L29/66 主分类号 H01L29/66
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