发明名称 Magnetron sputtering device, useful in plant for treating strip-like substrate, comprises anode housing as etching surface of first surface of substrate to be treated, and magnet arrangement as second etching surface of substrate
摘要 <p>The magnetron sputtering device comprises an anode housing as an etching surface of a first surface of a substrate (5) to be treated, and a magnet arrangement (4) as a second etching surface of substrate opposite to the first surface. The magnet arrangement forms a substrate penetrating magnetic field such that a circumferentially closed tunnel of magnetic field lines is created over the etched surface. The anode housing is designed as a metallic anode (2) with an anode potential, and comprises a dark field shield covering the etched surface. The magnetron sputtering device comprises an anode housing as an etching surface of a first surface of a substrate (5) to be treated, and a magnet arrangement (4) as a second etching surface of substrate opposite to the first surface. The magnet arrangement forms a substrate penetrating magnetic field such that a circumferentially closed tunnel of magnetic field lines is created over the etched surface. The anode housing is designed as a metallic anode (2) with an anode potential, and comprises a dark field shield covering the etched surface. A partially adjacent cathode potential is provided on the substrate and in the dark-field shield. The dark-field shield is formed with an input and/or output-side substrate passage opening of the device such that the substrate is arranged transverse to its transport direction. A part of the dark field shield is movable so that a substrate distance is adjusted. Units are provided such that the substrate distance is reduced to a predetermined minimum distance depending on the position of the substrate, and comprise a measuring unit for detecting the position of the substrate with respect to a portion of the apparatus and a lifting unit for moving a part of the device. The dark-field shield, anode housing and/or magnet arrangement is movable by the lifting unit. The cathode potential lies at ground so that the cathode potential equals to a potential of the housing of the device. The anode housing is sucked by openings of the anode housing. The housings are arranged between two webs, and are formed to electrically insulated from the dark-field shield. The web is formed as a plate or as a strip-shaped element, which is arranged parallel to the substrate, is provided in the part of the dark field shield, and is located between the substrate and the opening. An intermediate potential is applied on the web, and is greater than the cathode potential and lower than the anode potential. The measuring unit comprises a mechanical part contacted to the etched surface so that the position of the etched surface is determined. The lifting unit is a spring and a drive element movable to orthogonal to the etched surface for the mechanical detection of the measuring unit, and is configured to bring the part of the device to an equi-distant location to the substrate. The measuring unit is performed by raising an electrical measuring signal so that the position of the etched surface is determined. A mechanical contact is made via rollers, brushes or graphite. The part of the shield is moved at the opening, and includes a screening roller. The magnet arrangement is arranged within a treatment roller over which the band-shaped substrate is passed. An independent claim is included for a system for vacuum treatment of substrates.</p>
申请公布号 DE102012107630(B3) 申请公布日期 2014.01.23
申请号 DE201210107630 申请日期 2012.08.20
申请人 VON ARDENNE ANLAGENTECHNIK GMBH 发明人 FABER, JOERG;BOTZLER, PETER;HAUFE, DIETRICH
分类号 C23C14/35;C23C14/56;C23C16/54;C23F4/02 主分类号 C23C14/35
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