GATE STRUCTURE, SEMICONDUCTOR COMPONENT, AND METHODS FOR FORMING BOTH

摘要

The present disclosure relates to a gate structure, a semiconductor component, and methods for forming both. Provided in the present disclosed embodiments is the method for forming the gate structure, comprising: providing a substrate; forming an interface layer on the substrate; forming a gate dielectric layer on the interface layer; forming a gate dielectric protective layer on the gate dielectric layer; forming an etching barrier layer on the gate dielectric protective layer; forming an oxygen-adsorbing element layer on the etching barrier layer; forming an oxygen-adsorbing element protective layer on the oxygen-adsorbing element layer; performing annealing after metallization; performing etching until the etching barrier layer is exposed; forming a work function adjustment layer on the etching barrier layer; and forming a gate layer on the work function adjustment layer. The method provided in the present disclosed embodiments for forming the gate structure allows for effectively reduced equivalent gate oxide layer thickness.