发明名称 |
TRANSISTORS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
Transistors, and methods of manufacturing the transistors, include graphene and a material converted from graphene. The transistor may include a channel layer including graphene and a gate insulating layer including a material converted from graphene. The material converted from the graphene may be fluorinated graphene. The channel layer may include a patterned graphene region. The patterned graphene region may be defined by a region converted from graphene. A gate of the transistor may include graphene. |
申请公布号 |
US2014021446(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201313792525 |
申请日期 |
2013.03.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANG-SEUNG;KIM YONG-SUNG;LEE JOO-HO;JUNG YONG-SEOK |
分类号 |
H01L29/16;H01L29/66;H01L29/78 |
主分类号 |
H01L29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|