发明名称 FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
摘要 An FePt-C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target.
申请公布号 US2014021043(A1) 申请公布日期 2014.01.23
申请号 US201214008211 申请日期 2012.03.15
申请人 MIYASHITA TAKANOBU;GOTO YASUYUKI;KUSHIBIKI RYOUSUKE;AONO MASAHIRO;NISHIURA MASAHIRO;TANAKA KIKINZOKU KOGYO K.K. 发明人 MIYASHITA TAKANOBU;GOTO YASUYUKI;KUSHIBIKI RYOUSUKE;AONO MASAHIRO;NISHIURA MASAHIRO
分类号 C23C14/34 主分类号 C23C14/34
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