发明名称 |
FEPT-C-BASED SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME |
摘要 |
An FePt-C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target. |
申请公布号 |
US2014021043(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201214008211 |
申请日期 |
2012.03.15 |
申请人 |
MIYASHITA TAKANOBU;GOTO YASUYUKI;KUSHIBIKI RYOUSUKE;AONO MASAHIRO;NISHIURA MASAHIRO;TANAKA KIKINZOKU KOGYO K.K. |
发明人 |
MIYASHITA TAKANOBU;GOTO YASUYUKI;KUSHIBIKI RYOUSUKE;AONO MASAHIRO;NISHIURA MASAHIRO |
分类号 |
C23C14/34 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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