METHOD FOR MANUFACTURING FIELD STOP IGBT

摘要

Provided in the present invention is a method for manufacturing a field stop insulated-gate bipolar transistor (FS-IGBT), related to the technical field of IGBT. The manufacturing method comprises the following steps: providing a chip for use in manufacturing the FS-IGBT and in completing on the rear side thereof a FS layer doping; forming a protective layer on the rear side of the chip; completing a front-side technique process for the front side of the chip; removing the protective layer; and, forming a rear electrode on the FS layer. The manufacturing method is capable of preventing the FS layer from local damages during the front-side technique process, thus facilitating increased performance and yield of the FS-IGBT.