发明名称 |
LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF |
摘要 |
A light emitting diode (LED) includes a substrate and an eputaxial layer on the substrate. The epitaxial layer includes a N-type GaN-based layer, a light emitting layer, and a P-type GaN-based layer. The LED further includes a first electrode on the N-type GaN-based layer and a second electrode on the P-type GaN-based layer. The P-type GaN-based layer has a inactive portion, and the second electrode is located and covers the inactive portion. |
申请公布号 |
US2014021486(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201313907988 |
申请日期 |
2013.06.03 |
申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
LIN YA-WEN;HUANG SHIH-CHENG;TU PO-MIN |
分类号 |
H01L33/32;H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|