| 发明名称 |
SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING OXIDE SEMICONDUCTOR THIN FILM |
| 摘要 |
<p>A sputtering target which is formed of an oxide that contains indium element (In), tin element (Sn), zinc element (Zn) and aluminum element (Al), while containing a homologous structure compound represented by InAlO3(ZnO)m (wherein m is 0.1-10). In this sputtering target, the atomic ratio among the indium element, tin element, zinc element and aluminum element satisfies a specific condition.</p> |
| 申请公布号 |
WO2014013728(A1) |
申请公布日期 |
2014.01.23 |
| 申请号 |
WO2013JP04356 |
申请日期 |
2013.07.17 |
| 申请人 |
IDEMITSU KOSAN CO.,LTD.;EBATA, KAZUAKI;NISHIMURA, MAMI;TAJIMA, NOZOMI |
发明人 |
EBATA, KAZUAKI;NISHIMURA, MAMI;TAJIMA, NOZOMI |
| 分类号 |
C23C14/34;C04B35/00;C04B35/453;C23C14/08;G02F1/1368;H01L21/336;H01L21/363;H01L29/786 |
主分类号 |
C23C14/34 |
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代理人 |
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