发明名称 METHOD FOR FORMING CONTINUOUS COPPER THIN FILM THROUGH VAPOR PHASE GROWTH
摘要 PROBLEM TO BE SOLVED: To provide a method for preparing a multi-layer substrate.SOLUTION: A method comprises the steps of: providing a first layer including a barrier region and a copper region; and depositing a second layer containing copper on the first layer. The depositing step provides the second layer with a first thickness ranging from about 20 Å to about 2,000 Å on the barrier region and a second thickness ranging from about 0 Å to about 1,000 Å on the copper region in the first layer. Thus, a multi-layer substrate including the first layer and the second layer is prepared, where the first thickness is greater than the second thickness.
申请公布号 JP2014013923(A) 申请公布日期 2014.01.23
申请号 JP20130178345 申请日期 2013.08.29
申请人 AIR PRODUCTS AND CHEMICALS INC 发明人 NORMAN JOHN A T
分类号 H01L21/285;C23C16/18;H01L21/3205;H01L21/768;H01L23/532 主分类号 H01L21/285
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