| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved edge emission semiconductor laser in which heat generation due to nonradiative recombination in the side facet of the semiconductor laser is relaxed.SOLUTION: In the edge emission semiconductor laser, a plurality of contact surfaces 8a, 8b, and 8c are attached, at a periodic interval, onto a partial region of the semiconductor laser used for electrical pumping of an active layer forming a laser beam 13. The periodic interval is equal to two times of the transition length Lc, the transition length Lc is the interval of a maximum strength and an adjoining minimum strength in one of waveguide layers 1, 2. The midpoints of the contact surfaces 8a, 8c adjoining the side facet 9 are separated, respectively, therefrom by the transition length. |
