发明名称 DISCONTINUOUS THIN SEMICONDUCTOR WAFER SURFACE FEATURES
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor wafer with reduced stress.SOLUTION: A semiconductor wafer comprises: a semiconductor substrate having a front side and a back side; and a film formed on the front side of the semiconductor substrate. The substrate and/or the film have at least one etching line creating a discontinuous surface that reduces residual stress in the wafer. Reducing residual stress in the semiconductor wafer reduces warpage of the wafer when the wafer is thin. Additionally, isolation plugs may be used to fill a portion of the etching lines to prevent shorting of the layers.
申请公布号 JP2014013932(A) 申请公布日期 2014.01.23
申请号 JP20130190298 申请日期 2013.09.13
申请人 QUALCOMM INC 发明人 ARVIND CHANDRASEKARAN
分类号 H01L21/316;H01L21/02;H01L21/312;H01L21/318;H01L21/3205;H01L21/768;H01L23/522 主分类号 H01L21/316
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