发明名称 |
HIGH FREQUENCY FILTER FOR IMPROVED RF BIAS SIGNAL STABILITY |
摘要 |
A plasma-assisted etch process for the manufacture of semiconductor or MEMS devices employs an RF source to generate a plasma that is terminated through an electrode. The termination is designed as a "short" at the frequency of the RF source to minimize voltage fluctuations on the electrode due to the RF source energy. The electrode voltage potential can then be accurately controlled with a bias source, resulting in improved control of etch depth of a semiconductor substrate disposed on the electrode. |
申请公布号 |
WO2014015272(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
WO2013US51330 |
申请日期 |
2013.07.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TRACHUCK, YURI;CHEBI, ROBERT;ALMGREN, CARL |
分类号 |
H05H1/30;H01L21/3065 |
主分类号 |
H05H1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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