发明名称 |
Semiconductor Memory Device Having Dummy Bit Line |
摘要 |
A semiconductor memory device includes a plurality of functional bit lines, at least one dummy bit line, and a dummy bit line selection unit. The at least one dummy bit line is adjacent to an outermost bit line of the functional bit lines. The dummy bit line selection unit activates the at least one dummy bit line in response to a selection control signal of one of the plurality of functional bit lines that is not adjacent to the at least one dummy bit line. The semiconductor memory device may ensure a photo margin, so that the pattern size of the functional bit lines can be made uniform. |
申请公布号 |
US2014022831(A1) |
申请公布日期 |
2014.01.23 |
申请号 |
US201313945418 |
申请日期 |
2013.07.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JIN-YOUNG;KANG MIN-GU;LEE JAE-YUN;CHO BEAK-HYUNG |
分类号 |
G11C5/06 |
主分类号 |
G11C5/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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