发明名称 HIGH TEMPERATURE THERMAL ANNEALING PROCESS
摘要 <p>A method for processing a substrate is provided. The method includes: a step of applying the film of a copolymer composition including a poly(styrene)-b-poly(siloxane) block copolymer component and an antioxidant to the surface of the substrate; a step of optionally baking the film; and a step of subjecting the film to a high temperature annealing process under a gaseous atmosphere for a predetermined period of time and treating the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.</p>
申请公布号 KR20140009065(A) 申请公布日期 2014.01.22
申请号 KR20130082045 申请日期 2013.07.12
申请人 ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C.;DOW GLOBAL TECHNOLOGIES LLC 发明人 GU XINYU;CHANG SHIH WEI;HUSTAD PHILLIP;WEINHOLD JEFFREY;TREFONAS PETER
分类号 H01L21/324;H01L21/027 主分类号 H01L21/324
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