发明名称 |
HIGH TEMPERATURE THERMAL ANNEALING PROCESS |
摘要 |
<p>A method for processing a substrate is provided. The method includes: a step of applying the film of a copolymer composition including a poly(styrene)-b-poly(siloxane) block copolymer component and an antioxidant to the surface of the substrate; a step of optionally baking the film; and a step of subjecting the film to a high temperature annealing process under a gaseous atmosphere for a predetermined period of time and treating the annealed film to remove the poly(styrene) from the annealed film and to convert the poly(siloxane) in the annealed film to SiOx.</p> |
申请公布号 |
KR20140009065(A) |
申请公布日期 |
2014.01.22 |
申请号 |
KR20130082045 |
申请日期 |
2013.07.12 |
申请人 |
ROHM AND HAAS ELECTRONIC MATERIALS, L.L.C.;DOW GLOBAL TECHNOLOGIES LLC |
发明人 |
GU XINYU;CHANG SHIH WEI;HUSTAD PHILLIP;WEINHOLD JEFFREY;TREFONAS PETER |
分类号 |
H01L21/324;H01L21/027 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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