发明名称 MEMORY CELL HAVING CLOSED CURVE STRUCTURE
摘要 A memory cell for a printhead includes a substrate with a source and a drain. The substrate further includes a channel located between the source and the drain and surrounding the drain. The drain can include a first rounded closed curved structure. The memory cell can include a floating gate and a control gate. The floating gate can include a second rounded closed curve structure located above the channel and below the control gate. The control gate is capacitively coupled to the floating gate.
申请公布号 EP2686882(A1) 申请公布日期 2014.01.22
申请号 EP20110860807 申请日期 2011.03.15
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 VILLAVELEZ, REYNALDO V.;MIKULAN, PAUL I.
分类号 H01L27/115;G11C16/10;H01L21/28;H01L29/423;H01L29/66;H01L29/788 主分类号 H01L27/115
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