发明名称 |
MEMORY CELL HAVING CLOSED CURVE STRUCTURE |
摘要 |
A memory cell for a printhead includes a substrate with a source and a drain. The substrate further includes a channel located between the source and the drain and surrounding the drain. The drain can include a first rounded closed curved structure. The memory cell can include a floating gate and a control gate. The floating gate can include a second rounded closed curve structure located above the channel and below the control gate. The control gate is capacitively coupled to the floating gate. |
申请公布号 |
EP2686882(A1) |
申请公布日期 |
2014.01.22 |
申请号 |
EP20110860807 |
申请日期 |
2011.03.15 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
VILLAVELEZ, REYNALDO V.;MIKULAN, PAUL I. |
分类号 |
H01L27/115;G11C16/10;H01L21/28;H01L29/423;H01L29/66;H01L29/788 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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