发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SOLID-STATE IMAGE PICKUP ELEMENT |
摘要 |
A method of producing a semiconductor epitaxial wafer 100 according to the present invention includes a first step of irradiating a semiconductor wafer 10 with cluster ions 16 to form a modifying layer 18 formed from a constituent element of the cluster ions 16 in a surface portion 10A of the semiconductor wafer; and a second step of forming an epitaxial layer 20 on the modifying layer 18 of the semiconductor wafer 10. |
申请公布号 |
KR20140009565(A) |
申请公布日期 |
2014.01.22 |
申请号 |
KR20137032894 |
申请日期 |
2012.03.19 |
申请人 |
SUMCO CORPORATION |
发明人 |
KADONO TAKESHI;KURITA KAZUNARI |
分类号 |
H01L21/322;H01L21/20;H01L21/265;H01L27/146 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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